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Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2

dc.contributor.authorGaur, Abhinav
dc.contributor.authorChiappe, Daniele
dc.contributor.authorLin, Dennis
dc.contributor.authorCott, Daire
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorHeyns, Marc
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-27T09:32:51Z
dc.date.available2021-10-27T09:32:51Z
dc.date.issued2019
dc.identifier.issn2053-1583
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33017
dc.sourceIIOimport
dc.titleAnalysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
dc.typeJournal article
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewyes
dc.source.beginpage35035
dc.source.journal2D Materials
dc.source.issue3
dc.source.volume6
dc.identifier.urlhttps://doi.org/10.1088/2053-1583/ab20fb
imec.availabilityPublished - imec


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