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650 V p-GaN gate power HEMTs on 200 mm engineered substrates

dc.contributor.authorGeens, Karen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorGuo, Weiming
dc.contributor.authorWellekens, Dirk
dc.contributor.authorPosthuma, Niels
dc.contributor.authorFahle, Dirk
dc.contributor.authorAktas, Ozgur
dc.contributor.authorOdnoblyudov, Vlad
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-27T09:34:00Z
dc.date.available2021-10-27T09:34:00Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33020
dc.sourceIIOimport
dc.title650 V p-GaN gate power HEMTs on 200 mm engineered substrates
dc.typeProceedings paper
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage292
dc.source.endpage296
dc.source.conference7th Workshop on Wide Bandgap Power Devices and Applications - WIPDA 2019
dc.source.conferencedate29/10/2019
dc.source.conferencelocationRaleigh, NC United States
imec.availabilityPublished - imec


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