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Impact of charge trapping on imprint and its recovery in HfO2 based FeFET

dc.contributor.authorHigashi, Yusuke
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorKaczer, Ben
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorClima, Sergiu
dc.contributor.authorMinj, Albert
dc.contributor.authorCelano, Umberto
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorSuzuki, Masamichi
dc.contributor.authorLinten, Dimitri
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-27T10:28:52Z
dc.date.available2021-10-27T10:28:52Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33160
dc.sourceIIOimport
dc.titleImpact of charge trapping on imprint and its recovery in HfO2 based FeFET
dc.typeProceedings paper
dc.contributor.imecauthorHigashi, Yusuke
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorSuzuki, Masamichi
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage358
dc.source.endpage361
dc.source.conference2019 IEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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