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dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMerckling, Clement
dc.contributor.authorEneman, Geert
dc.contributor.authorMols, Yves
dc.contributor.authorHan, Han
dc.contributor.authorAlian, AliReza
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-27T10:34:19Z
dc.date.available2021-10-27T10:34:19Z
dc.date.issued2019
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33172
dc.sourceIIOimport
dc.titleThe impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
dc.typeJournal article
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage485102
dc.source.journalJournal of Physics D: Applied Physics
dc.source.issue48
dc.source.volume52
dc.identifier.urlhttps://doi.org/10.1088/1361-6463/ab3eca
imec.availabilityPublished - imec


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