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Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory

dc.contributor.authorJech, Markus
dc.contributor.authorUlmann, Bianka
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorGrill, Alexander
dc.contributor.authorWaltl, Michael
dc.contributor.authorJabs, Dominic
dc.contributor.authorJungemann, Christoph
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-27T10:55:58Z
dc.date.available2021-10-27T10:55:58Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33222
dc.sourceIIOimport
dc.titleImpact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
dc.typeJournal article
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorGrill, Alexander
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage241
dc.source.endpage248
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8527641
imec.availabilityPublished - imec


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