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P-N junction peripheral current analysis using gated diode measurements

dc.contributor.authorCzerwinski, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPoyai, Amporn
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-06T10:51:34Z
dc.date.available2021-10-06T10:51:34Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3327
dc.sourceIIOimport
dc.titleP-N junction peripheral current analysis using gated diode measurements
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage437
dc.source.endpage442
dc.source.conferenceProceedings of the 8th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST
dc.source.conferencedate25/09/1999
dc.source.conferencelocationHöör Sweden
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vol. 69-70


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