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Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature phosphorus extension ion implantation

dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorHopf, Toby
dc.contributor.authorMannaert, Geert
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorKubicek, Stefan
dc.contributor.authorEyben, Pierre
dc.contributor.authorWaite, Andrew
dc.contributor.authorBorniquel, Jose
dc.contributor.authorVariam, Naushad
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-27T11:28:43Z
dc.date.available2021-10-27T11:28:43Z
dc.date.issued2019
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33295
dc.sourceIIOimport
dc.titleImprovement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature phosphorus extension ion implantation
dc.typeJournal article
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage58
dc.source.endpage64
dc.source.journalSolid-State Electronics
dc.source.volume152
dc.identifier.urlhttps://doi.org/10.1016/j.sse.2018.11.003
imec.availabilityPublished - imec


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