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Asymmetrical voltage driving for memory window improvement of flexible 1TFT-1RRAM cells for future Internet-Of-Things applications

dc.contributor.authorLebanov, Ana
dc.contributor.authorFantini, Andrea
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.contributor.authorMyny, Kris
dc.date.accessioned2021-10-27T12:13:00Z
dc.date.available2021-10-27T12:13:00Z
dc.date.issued2019-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33387
dc.sourceIIOimport
dc.titleAsymmetrical voltage driving for memory window improvement of flexible 1TFT-1RRAM cells for future Internet-Of-Things applications
dc.typeProceedings paper
dc.contributor.imecauthorLebanov, Ana
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.imecauthorMyny, Kris
dc.contributor.orcidimecLebanov, Ana::0000-0002-3933-4951
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage329
dc.source.endpage330
dc.source.conferenceExtended Abstracts of the 2019 International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate2/09/2019
dc.source.conferencelocationNagoya Japan
dc.identifier.urlhttp://www.ssdm.jp/docs/SSDM2019_TechnicalProgram_Sep4.pdf?rev=20190827
imec.availabilityPublished - open access


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