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High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint technology

dc.contributor.authorLenk, Claudia
dc.contributor.authorKrivoshapkina, Yana
dc.contributor.authorHofmann, Martin
dc.contributor.authorLenk, Steve
dc.contributor.authorTzvetan, Ivanov
dc.contributor.authorRangelow, Ivo
dc.contributor.authorAhmad, Ahmad
dc.contributor.authorReum, Alexander
dc.contributor.authorHolz, M
dc.contributor.authorGlinsner, Thomas
dc.contributor.authorEibelhuber, Martin
dc.contributor.authorTreiblmayr, Dominik
dc.contributor.authorSchamberger, Barbara
dc.contributor.authorChan, BT
dc.contributor.authorEl Otell, Ziad
dc.contributor.authorde Marneffe, Jean-Francois
dc.date.accessioned2021-10-27T12:20:20Z
dc.date.available2021-10-27T12:20:20Z
dc.date.issued2019
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33402
dc.sourceIIOimport
dc.titleHigh-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint technology
dc.typeJournal article
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorEl Otell, Ziad
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecde Marneffe, Jean-Francois::0000-0001-5178-6670
dc.source.peerreviewyes
dc.source.beginpage21603
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue2
dc.source.volume37
dc.identifier.urlhttps://doi.org/10.1116/1.5067269
imec.availabilityPublished - imec


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