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p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs

dc.contributor.authorLi, Xiangdong
dc.contributor.authorGeens, Karen
dc.contributor.authorGuo, Weiming
dc.contributor.authorZhao, Ming
dc.contributor.authorYou, Shuzhen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorStoffels, Steve
dc.contributor.authorLiang, Hu
dc.contributor.authorOdnoblyudov, Vladimir
dc.contributor.authorBasceri, Cem
dc.contributor.authorAktas, Ozgur
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-27T12:35:57Z
dc.date.available2021-10-27T12:35:57Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33433
dc.sourceIIOimport
dc.titlep-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs
dc.typeMeeting abstract
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationSeattle, WA US
imec.availabilityPublished - imec


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