dc.contributor.author | Li, Xiangdong | |
dc.contributor.author | Zhao, Ming | |
dc.contributor.author | Bakeroot, Benoit | |
dc.contributor.author | Geens, Karen | |
dc.contributor.author | Guo, Weiming | |
dc.contributor.author | Lempinen, Vesa-Pekka | |
dc.contributor.author | Sormunen, Jaakko | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Decoutere, Stefaan | |
dc.date.accessioned | 2021-10-27T12:37:04Z | |
dc.date.available | 2021-10-27T12:37:04Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/33435 | |
dc.source | IIOimport | |
dc.title | Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI | |
dc.type | Journal article | |
dc.contributor.imecauthor | Li, Xiangdong | |
dc.contributor.imecauthor | Zhao, Ming | |
dc.contributor.imecauthor | Bakeroot, Benoit | |
dc.contributor.imecauthor | Geens, Karen | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Zhao, Ming::0000-0002-0856-851X | |
dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 553 | |
dc.source.endpage | 536 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 1 | |
dc.source.volume | 66 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8532115 | |
imec.availability | Published - open access | |