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dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorGeens, Karen
dc.contributor.authorGuo, Weiming
dc.contributor.authorLempinen, Vesa-Pekka
dc.contributor.authorSormunen, Jaakko
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-27T12:37:04Z
dc.date.available2021-10-27T12:37:04Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33435
dc.sourceIIOimport
dc.titleBuffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
dc.typeJournal article
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage553
dc.source.endpage536
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8532115
imec.availabilityPublished - open access


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