dc.contributor.author | Liang, Hu | |
dc.contributor.author | Posthuma, Niels | |
dc.contributor.author | Stoffels, Steve | |
dc.contributor.author | Zhao, Ming | |
dc.contributor.author | Decoutere, Stefaan | |
dc.date.accessioned | 2021-10-27T12:40:43Z | |
dc.date.available | 2021-10-27T12:40:43Z | |
dc.date.issued | 2019 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/33442 | |
dc.source | IIOimport | |
dc.title | Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Liang, Hu | |
dc.contributor.imecauthor | Posthuma, Niels | |
dc.contributor.imecauthor | Stoffels, Steve | |
dc.contributor.imecauthor | Zhao, Ming | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
dc.contributor.orcidimec | Zhao, Ming::0000-0002-0856-851X | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.conference | 13th International Conference on Nitride Semiconductors (ICNS-13) | |
dc.source.conferencedate | 7/07/2019 | |
dc.source.conferencelocation | Seattle, WA USA | |
imec.availability | Published - open access | |