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Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates

dc.contributor.authorLiang, Hu
dc.contributor.authorPosthuma, Niels
dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-27T12:40:43Z
dc.date.available2021-10-27T12:40:43Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33442
dc.sourceIIOimport
dc.titleEnhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates
dc.typeOral presentation
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference13th International Conference on Nitride Semiconductors (ICNS-13)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationSeattle, WA USA
imec.availabilityPublished - open access


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