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Electrical and DLTS Characterization of AlN buffers for GaN on Si technology

dc.contributor.authorMare, Juraj
dc.contributor.authorMikolasek, Miroslav
dc.contributor.authorDrobny, Jakub
dc.contributor.authorZhao, Ming
dc.contributor.authorStoffels, Steve
dc.contributor.authorKosa, Arpad
dc.contributor.authorBenko, Peter
dc.contributor.authorChvála, Aleš
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorStuchlikova, Lubica
dc.date.accessioned2021-10-27T13:28:43Z
dc.date.available2021-10-27T13:28:43Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33532
dc.sourceIIOimport
dc.titleElectrical and DLTS Characterization of AlN buffers for GaN on Si technology
dc.typeMeeting abstract
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conferenceWorkshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate17/06/2019
dc.source.conferencelocationCabourg France
imec.availabilityPublished - imec


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