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Threshold voltage variations in semi-vertical GaN-on-Si FETs: A comprehensive study

dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorBorga, Matteo
dc.contributor.authorRuzzarin, Maria
dc.contributor.authorStoffels, Steve
dc.contributor.authorGeens, Karen
dc.contributor.authorLiang, Hu
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.date.accessioned2021-10-27T14:24:53Z
dc.date.available2021-10-27T14:24:53Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33631
dc.sourceIIOimport
dc.titleThreshold voltage variations in semi-vertical GaN-on-Si FETs: A comprehensive study
dc.typeMeeting abstract
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorRuzzarin, Maria
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationSeattle, WA USA
imec.availabilityPublished - imec


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