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Ab initio analysis of defect formation and dopant activation in P and As co-doped Si

dc.contributor.authorNakazaki, Nobuya
dc.contributor.authorRosseel, Erik
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-27T14:34:12Z
dc.date.available2021-10-27T14:34:12Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33647
dc.sourceIIOimport
dc.titleAb initio analysis of defect formation and dopant activation in P and As co-doped Si
dc.typeMeeting abstract
dc.contributor.imecauthorNakazaki, Nobuya
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.conference2019 E-MRS Fall Meeting and Exhibit
dc.source.conferencedate16/09/2019
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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