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A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements

dc.contributor.authorPadovani, Andrea
dc.contributor.authorKaczer, Ben
dc.contributor.authorPesic, Milan
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorNyns, Laura
dc.contributor.authorLinten, Dimitri
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorShlyakhov, Ilya
dc.contributor.authorLee, Younggon
dc.contributor.authorPark, Hokyung
dc.contributor.authorLarcher, Luca
dc.date.accessioned2021-10-27T15:17:14Z
dc.date.available2021-10-27T15:17:14Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33720
dc.sourceIIOimport
dc.titleA sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorShlyakhov, Ilya
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1892
dc.source.endpage1998
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue4
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8660699
imec.availabilityPublished - open access


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