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Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy

dc.contributor.authorRosseel, Erik
dc.contributor.authorTirrito, Matteo
dc.contributor.authorPorret, Clément
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorNakazaki, Nobuya
dc.contributor.authorTolle, John
dc.date.accessioned2021-10-27T17:16:04Z
dc.date.available2021-10-27T17:16:04Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33908
dc.sourceIIOimport
dc.titleCharacterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorNakazaki, Nobuya
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage11
dc.source.endpage15
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison, WI USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/93/1/11.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 93, issue 1


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