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The sapphire surface structure and its impact on MOCVD grown wafer-scale MoS2 uniformity and MOSFET variability

dc.contributor.authorShi, Yuanyuan
dc.contributor.authorGroven, Benjamin
dc.contributor.authorSerron, Jill
dc.contributor.authorHan, Han
dc.contributor.authorBanerjee, Sreetama
dc.contributor.authorWu, Xiangyu
dc.contributor.authorLudwig, Jonathan
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorLin, Dennis
dc.contributor.authorMorin, Pierre
dc.contributor.authorCaymax, Matty
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-27T18:10:36Z
dc.date.available2021-10-27T18:10:36Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33992
dc.sourceIIOimport
dc.titleThe sapphire surface structure and its impact on MOCVD grown wafer-scale MoS2 uniformity and MOSFET variability
dc.typeOral presentation
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorSerron, Jill
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorBanerjee, Sreetama
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorLudwig, Jonathan
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecSerron, Jill::0000-0002-9101-8139
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewno
dc.source.conferenceIEEE International Electron Devices Meeting
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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