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Relation between oxide-CMP induced defects and post-CMP cleaning strategies

dc.contributor.authorDevriendt, Katia
dc.contributor.authorVrancken, Evi
dc.contributor.authorHeylen, Nancy
dc.contributor.authorGrillaert, Joost
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorLing, Zhi Ming
dc.date.accessioned2021-10-06T11:04:21Z
dc.date.available2021-10-06T11:04:21Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3418
dc.sourceIIOimport
dc.titleRelation between oxide-CMP induced defects and post-CMP cleaning strategies
dc.typeProceedings paper
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage173
dc.source.endpage176
dc.source.conferenceUltra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenmomena; Vols. 65-66


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