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Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment

dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorKohen, David
dc.contributor.authorFolkersma, Steven
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorSchaekers, Marc
dc.contributor.authorTolle, John
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorCapogreco, Elena
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLanger, Robert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-27T22:59:40Z
dc.date.available2021-10-27T22:59:40Z
dc.date.issued2019-03
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34401
dc.sourceIIOimport
dc.titleLow temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment
dc.typeJournal article
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorFolkersma, Steven
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpageSBBA04-1
dc.source.endpageSBBA04-8
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume58
dc.identifier.urlhttps://iopscience.iop.org/article/10.7567/1347-4065/ab027b/meta
imec.availabilityPublished - imec


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