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Source/drain materials for Ge nMOS devices

dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorCapogreco, Elena
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-27T23:02:11Z
dc.date.available2021-10-27T23:02:11Z
dc.date.issued2019-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34404
dc.sourceIIOimport
dc.titleSource/drain materials for Ge nMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage29
dc.source.endpage33
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/93/1/29.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 93, issue 1


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