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Microstructure and compositional bahviour of InGaN/GaN multiple quantum well structures

dc.contributor.authorDuxbury, N.
dc.contributor.authorBangert, U.
dc.contributor.authorShang, P.
dc.contributor.authorThrush, E. J.
dc.contributor.authorJacobs, Koen
dc.date.accessioned2021-10-06T11:08:07Z
dc.date.available2021-10-06T11:08:07Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3441
dc.sourceIIOimport
dc.titleMicrostructure and compositional bahviour of InGaN/GaN multiple quantum well structures
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage207
dc.source.endpage210
dc.source.conferenceElectron Microscopy and Analysis 1999; Sheffield, UK. August 1999.
imec.availabilityPublished - imec


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