dc.contributor.author | Duxbury, N. | |
dc.contributor.author | Dawson, P. | |
dc.contributor.author | Bangert, U. | |
dc.contributor.author | Thrush, E. J. | |
dc.contributor.author | Van der Stricht, Wim | |
dc.contributor.author | Jacobs, Koen | |
dc.contributor.author | Moerman, Ingrid | |
dc.date.accessioned | 2021-10-06T11:08:27Z | |
dc.date.available | 2021-10-06T11:08:27Z | |
dc.date.issued | 1999 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/3443 | |
dc.source | IIOimport | |
dc.title | Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD | |
dc.type | Meeting abstract | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 130 | |
dc.source.conference | 3rd International Conference on Nitride Semiconductors - ICNS3 | |
dc.source.conferencedate | 04/07/1999 | |
dc.source.conferencelocation | Montpellier France | |
imec.availability | Published - open access | |