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Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD

dc.contributor.authorDuxbury, N.
dc.contributor.authorDawson, P.
dc.contributor.authorBangert, U.
dc.contributor.authorThrush, E. J.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-06T11:08:27Z
dc.date.available2021-10-06T11:08:27Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3443
dc.sourceIIOimport
dc.titleEffects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD
dc.typeMeeting abstract
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage130
dc.source.conference3rd International Conference on Nitride Semiconductors - ICNS3
dc.source.conferencedate04/07/1999
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - open access


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