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High NA EUV lithography simulation using new calibrated mask model

dc.contributor.authorWu, Meiyi
dc.contributor.authorMakhotkin, Igor
dc.contributor.authorPhilipsen, Vicky
dc.contributor.authorSoltwisch, Victor
dc.contributor.authorScholze, Frank
dc.date.accessioned2021-10-27T23:43:02Z
dc.date.available2021-10-27T23:43:02Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34458
dc.sourceIIOimport
dc.titleHigh NA EUV lithography simulation using new calibrated mask model
dc.typeProceedings paper
dc.contributor.imecauthorWu, Meiyi
dc.contributor.imecauthorMakhotkin, Igor
dc.contributor.imecauthorPhilipsen, Vicky
dc.contributor.orcidimecPhilipsen, Vicky::0000-0002-2959-432X
dc.source.peerreviewno
dc.source.conference17th Fraunhofer IISB Lithography Simulation Workshop
dc.source.conferencedate26/09/2019
dc.source.conferencelocationBehringermuehle Germany
imec.availabilityPublished - imec


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