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Interplay of intrinsic and doped amorphous silicon layer and ITO properties and process conditions on contact passivation in silicon heterojunction cells

dc.contributor.authorYadav, Tarun Singh
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorGordon, Ivan
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-27T23:56:23Z
dc.date.available2021-10-27T23:56:23Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34476
dc.sourceIIOimport
dc.titleInterplay of intrinsic and doped amorphous silicon layer and ITO properties and process conditions on contact passivation in silicon heterojunction cells
dc.typeProceedings paper
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.identifier.doi10.4229/EUPVSEC20192019-2DV.1.68
dc.source.peerreviewyes
dc.source.beginpage576
dc.source.endpage578
dc.source.conferenceProceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC
dc.source.conferencedate9/09/2019
dc.source.conferencelocationMarseille France
imec.availabilityPublished - imec


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