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Monolithically integrated GaN power ICs design facilitated by the MVSG compact model applied to enhancement-mode p-GaN gate HEMTs

dc.contributor.authorYou, Shuzhen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorParvais, Bertrand
dc.contributor.authorPosthuma, Niels
dc.contributor.authorGeens, Karen
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-28T00:11:26Z
dc.date.available2021-10-28T00:11:26Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34496
dc.sourceIIOimport
dc.titleMonolithically integrated GaN power ICs design facilitated by the MVSG compact model applied to enhancement-mode p-GaN gate HEMTs
dc.typeMeeting abstract
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference13th International Conference on Nitride Semiconductors
dc.source.conferencedate7/07/2019
dc.source.conferencelocationSeattle, WA USA
imec.availabilityPublished - imec


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