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Electron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy

dc.contributor.authorYu, Hao
dc.contributor.authorHsu, Brent
dc.contributor.authorVais, Abhitosh
dc.contributor.authorSimoen, Eddy
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-28T00:14:25Z
dc.date.available2021-10-28T00:14:25Z
dc.date.issued2019-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34500
dc.sourceIIOimport
dc.titleElectron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy
dc.typeProceedings paper
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conference2019 19th International Workshop on Junction Technology (IWJT)
dc.source.conferencedate6/06/2019
dc.source.conferencelocationKyoto Japan
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8802885
imec.availabilityPublished - imec


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