Show simple item record

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

dc.contributor.authorFarvacque, J. L.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorVan Tendeloo, G.
dc.contributor.authorLebedev, O.
dc.date.accessioned2021-10-06T11:10:03Z
dc.date.available2021-10-06T11:10:03Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3452
dc.sourceIIOimport
dc.titleRole of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage140
dc.source.endpage143
dc.source.journalPhysica B
dc.source.volume273-274
imec.availabilityPublished - open access
imec.internalnotesPaper from the 20th International Conference on Defects in Semiconductors; 26-30 July 1999; Berkeley, CA, USA


Files in this item

Thumbnail
Name:
3414.pdf
Size:
329.7Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record