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Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
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Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Date
1999
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Farvacque, J. L.
;
Bougrioua, Zahia
;
Moerman, Ingrid
;
Van Tendeloo, G.
;
Lebedev, O.
Journal
Physica B
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1941
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations
Metrics
Views
1941
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations