Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

dc.contributor.author	Farvacque, J. L.
dc.contributor.author	Bougrioua, Zahia
dc.contributor.author	Moerman, Ingrid
dc.contributor.author	Van Tendeloo, G.
dc.contributor.author	Lebedev, O.
dc.contributor.imecauthor	Moerman, Ingrid
dc.contributor.orcidimec	Moerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned	2021-10-06T11:10:03Z
dc.date.available	2021-10-06T11:10:03Z
dc.date.embargo	9999-12-31
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3452
dc.source.beginpage	140
dc.source.endpage	143
dc.source.journal	Physica B
dc.source.volume	273-274
dc.title	Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
dc.type	Journal article
dspace.entity.type	Publication
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