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Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates

dc.contributor.authorZhang, Weihang
dc.contributor.authorSimoen, Eddy
dc.contributor.authorZhao, Ming
dc.contributor.authorZhang, J.
dc.date.accessioned2021-10-28T00:46:07Z
dc.date.available2021-10-28T00:46:07Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34540
dc.sourceIIOimport
dc.titleAnalysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorZhao, Ming
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1849
dc.source.endpage1855
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue4
dc.source.volume66
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8657725
imec.availabilityPublished - open access


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