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Dispersion-free low RF loss GaN-on-Si structures grown on 200 mm Si substrate using MOVPE

dc.contributor.authorZhao, Ming
dc.contributor.authorChang, Shane
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-28T00:49:05Z
dc.date.available2021-10-28T00:49:05Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34544
dc.sourceIIOimport
dc.titleDispersion-free low RF loss GaN-on-Si structures grown on 200 mm Si substrate using MOVPE
dc.typeMeeting abstract
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conference13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationBellevue, WA USA
imec.availabilityPublished - imec


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