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200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application

dc.contributor.authorZhao, Ming
dc.contributor.authorLi, Xiangdong
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-28T00:49:45Z
dc.date.available2021-10-28T00:49:45Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34545
dc.sourceIIOimport
dc.title200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
dc.typeMeeting abstract
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationBellevue, WA USA
imec.availabilityPublished - imec


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