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Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

dc.contributor.authorAbrenica, Graniel
dc.contributor.authorLebedev, Mikhail
dc.contributor.authorFingerle, Mathias
dc.contributor.authorArnauts, Sophia
dc.contributor.authorBazzazian, Nina
dc.contributor.authorCalvet, Wolfram
dc.contributor.authorPorret, Clément
dc.contributor.authorBender, Hugo
dc.contributor.authorMayer, Thomas
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorvan Dorp, Dennis
dc.date.accessioned2021-10-28T20:08:59Z
dc.date.available2021-10-28T20:08:59Z
dc.date.issued2020
dc.identifier.issn2050-7526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34587
dc.sourceIIOimport
dc.titleAtomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis
dc.typeJournal article
dc.contributor.imecauthorAbrenica, Graniel
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorBazzazian, Nina
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.source.peerreviewyes
dc.source.beginpage10060
dc.source.endpage10070
dc.source.journalJournal of Materials Chemistry C
dc.source.issue29
dc.source.volume8
dc.identifier.urlhttps://doi.org/10.1039/D0TC02763D
imec.availabilityPublished - imec


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