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Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices

dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorCarmo, G.J.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-28T20:09:11Z
dc.date.available2021-10-28T20:09:11Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34599
dc.sourceIIOimport
dc.titleImpact of gate dielectric material on basic parameters of MO(I)SHEMT devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage53
dc.source.endpage58
dc.source.conference237th ECS Spring Meeting - Symposium Advanced CMOS-compatible Semiconductor Devices 19
dc.source.conferencedate10/05/2020
dc.source.conferencelocationBristol UK
dc.identifier.urlhttps://doi.org/10.1149/09705.0053ecst
imec.availabilityPublished - imec


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