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Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes

dc.contributor.authorGramenova, Emilia
dc.contributor.authorJansen, Philippe
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorDupas, Luc
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-10-06T11:13:17Z
dc.date.available2021-10-06T11:13:17Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3470
dc.sourceIIOimport
dc.titleImpact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDupas, Luc
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage359
dc.source.endpage363
dc.source.journalJ. Electrochem. Soc.
dc.source.issue1
dc.source.volume146
imec.availabilityPublished - imec


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