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Hot carrier degradation and time-dependent dielectric breakdown in oxides

dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorNigam, Tanya
dc.contributor.authorVan den bosch, G.
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-06T11:14:30Z
dc.date.available2021-10-06T11:14:30Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3477
dc.sourceIIOimport
dc.titleHot carrier degradation and time-dependent dielectric breakdown in oxides
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage27
dc.source.endpage40
dc.source.journalMicroelectronic Engineering
dc.source.issue1_2
dc.source.volume49
imec.availabilityPublished - open access
imec.internalnotesProceedings of the 3rd session of the International Summer School on Advanced Microelectronics (MIGAS): Reliability in VLSI Circuits: Operation, Manufacturing and Design. June 27 - July 4, 1999. Autrans, France


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