Authors

Bonaldo,; Zhao,; O Hara,; Gorchichko,; Zhang,; Gerardin,; Paccagnella,; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Pantelides,; Reed,; Schrimpf,; Fleetwood,

DOI

10.1109/TNS.2019.2957028

ISSN

0018-9499

Issue

1

Journal

IEEE Transactions on Nuclear Science

Volume

67

Title

Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics

Publication type

Journal article

Embargo date

9999-12-31