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Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics
Publication:
Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics
Date
2020
Journal article
https://doi.org/10.1109/TNS.2019.2957028
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bonaldo,
;
Zhao,
;
O Hara,
;
Gorchichko,
;
Zhang,
;
Gerardin,
;
Paccagnella,
;
Waldron, Niamh
;
Collaert, Nadine
;
Putcha, Vamsi
;
Linten, Dimitri
;
Pantelides,
;
Reed,
;
Schrimpf,
;
Fleetwood,
Journal
IEEE Transactions on Nuclear Science
Abstract
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2000
since deposited on 2021-10-28
Acq. date: 2025-10-27
Citations
Metrics
Views
2000
since deposited on 2021-10-28
Acq. date: 2025-10-27
Citations