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Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics

dc.contributor.authorBonaldo,
dc.contributor.authorZhao,
dc.contributor.authorO Hara,
dc.contributor.authorGorchichko,
dc.contributor.authorZhang,
dc.contributor.authorGerardin,
dc.contributor.authorPaccagnella,
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorLinten, Dimitri
dc.contributor.authorPantelides,
dc.contributor.authorReed,
dc.contributor.authorSchrimpf,
dc.contributor.authorFleetwood,
dc.date.accessioned2021-10-28T20:25:40Z
dc.date.available2021-10-28T20:25:40Z
dc.date.issued2020
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34796
dc.sourceIIOimport
dc.titleTotal-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics
dc.typeJournal article
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.identifier.doi10.1109/TNS.2019.2957028
dc.source.peerreviewyes
dc.source.beginpage210
dc.source.endpage220
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue1
dc.source.volume67
imec.availabilityPublished - open access


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