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Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates

dc.contributor.authorBonaldo, Stefano
dc.contributor.authorZhang, En Xia
dc.contributor.authorZhao, Simeng
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorParvais, Bertrand
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGerardin, Simone
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorReed, Robert A.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.date.accessioned2021-10-28T20:25:49Z
dc.date.available2021-10-28T20:25:49Z
dc.date.issued2020
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34797
dc.sourceIIOimport
dc.titleTotal-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
dc.typeJournal article
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1312
dc.source.endpage1319
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue7
dc.source.volume67
imec.availabilityPublished - open access


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