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Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies

dc.contributor.authorClaes, Dieter
dc.contributor.authorFranco, Jacopo
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-28T20:45:32Z
dc.date.available2021-10-28T20:45:32Z
dc.date.issued2020
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34910
dc.sourceIIOimport
dc.titlePositive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies
dc.typeJournal article
dc.contributor.imecauthorClaes, Dieter
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewyes
dc.source.beginpage104101
dc.source.journalJournal of Applied Physics
dc.source.issue10
dc.source.volume128
dc.identifier.urlhttps://doi.org/10.1063/5.0006110
imec.availabilityPublished - imec


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