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Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K. J.
dc.contributor.authorHarrison, I.
dc.contributor.authorFlannery, L. B.
dc.contributor.authorKorakakis, D.
dc.contributor.authorCheng, T.
dc.contributor.authorFoxon, C. T.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorThrush, E. J.
dc.contributor.authorHamilton, B.
dc.contributor.authorFerhah, K.
dc.date.accessioned2021-10-06T11:17:25Z
dc.date.available2021-10-06T11:17:25Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3492
dc.sourceIIOimport
dc.titleInterpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD
dc.typeMeeting abstract
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage126
dc.source.conference3rd International Conference on Nitride Semiconductors - ICNS3
dc.source.conferencedate04/07/1999
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - open access


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