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X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides

dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorde Bokx, P.
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-06T11:22:31Z
dc.date.available2021-10-06T11:22:31Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3518
dc.sourceIIOimport
dc.titleX-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage43
dc.source.endpage46
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume48
imec.availabilityPublished - open access
imec.internalnotesProceedings of the 11th Biennial Conf. on Insulating Films on Semiconductors - INFOS '99. 16-19 June, 1999. Kloster Banz, Germany


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