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Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

dc.contributor.authorGorchichko, M.
dc.contributor.authorCao, Y.
dc.contributor.authorZhang, E.X.
dc.contributor.authorYan, D.
dc.contributor.authorGong, H.
dc.contributor.authorZhao, S.E.
dc.contributor.authorWang, P.
dc.contributor.authorJiang, R.
dc.contributor.authorLiang, C.
dc.contributor.authorFleedwood, D.M.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorReed, R.A.
dc.contributor.authorLinten, Dimitri
dc.date.accessioned2021-10-28T22:02:56Z
dc.date.available2021-10-28T22:02:56Z
dc.date.issued2020
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35191
dc.sourceIIOimport
dc.titleTotal-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
dc.typeJournal article
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage245
dc.source.endpage252
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue1
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8937016
imec.availabilityPublished - open access


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