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Electrical properties of thin SiON/Ta2O5 gate dielectric stacks

dc.contributor.authorHoussa, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.authorJeon, J. S.
dc.contributor.authorHalliyal, A.
dc.contributor.authorOgle, B.
dc.date.accessioned2021-10-06T11:22:43Z
dc.date.available2021-10-06T11:22:43Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3519
dc.sourceIIOimport
dc.titleElectrical properties of thin SiON/Ta2O5 gate dielectric stacks
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage6462
dc.source.endpage6467
dc.source.journalJ. Appl. Phys.
dc.source.issue11
dc.source.volume86
imec.availabilityPublished - imec


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