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Investigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and below.

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPorret, Clément
dc.contributor.authorVohra, Anurag
dc.contributor.authorAyyad, Mustafa
dc.contributor.authorDouhard, Bastien
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-28T22:34:48Z
dc.date.available2021-10-28T22:34:48Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35276
dc.sourceIIOimport
dc.titleInvestigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and below.
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorAyyad, Mustafa
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage43
dc.source.endpage52
dc.source.conferenceECS PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09805.0043ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 98, Issue 5


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