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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorStesmans, Andre
dc.contributor.authorGoux, Ludovic
dc.contributor.authorDelhougne, Romain
dc.contributor.authorCarolan, Patrick
dc.contributor.authorBender, Hugo
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-28T22:39:34Z
dc.date.available2021-10-28T22:39:34Z
dc.date.issued2020
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35288
dc.sourceIIOimport
dc.titleA deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
dc.typeJournal article
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage044006-1
dc.source.endpage044006-7
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue4
dc.source.volume9
dc.identifier.urlhttps://doi.org/10.1149/2162-8777/ab8b70
imec.availabilityPublished - open access


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