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First order and low-frequency noise study of 0.35µm polysilicon bipolar transistor - Influence of RTS noise

dc.contributor.authorJarrix, S. G.
dc.contributor.authorDelseny, C.
dc.contributor.authorPenarier, A.
dc.contributor.authorPascal, F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-06T11:26:13Z
dc.date.available2021-10-06T11:26:13Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3536
dc.sourceIIOimport
dc.titleFirst order and low-frequency noise study of 0.35µm polysilicon bipolar transistor - Influence of RTS noise
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage108
dc.source.endpage111
dc.source.conferenceICNF 1999. 15th International Conference on Noise in Physical Systems and 1/f Fluctuations
dc.source.conferencedate23/08/1999
dc.source.conferencelocationHong-Kong
imec.availabilityPublished - open access


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