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Comparison of temperature dependent carrier transport in FinFET and gate-all-Around nanowire FET

dc.contributor.authorKim, Soohyun
dc.contributor.authorKim, Jungchun
dc.contributor.authorJang, Doyoung
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorParvais, Bertrand
dc.contributor.authorMitard, Jerome
dc.contributor.authorMertens, Hans
dc.contributor.authorChiarella, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLee, Jae Woo
dc.date.accessioned2021-10-28T23:20:27Z
dc.date.available2021-10-28T23:20:27Z
dc.date.issued2020
dc.identifier.issn2076-3417
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35390
dc.sourceIIOimport
dc.titleComparison of temperature dependent carrier transport in FinFET and gate-all-Around nanowire FET
dc.typeJournal article
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage2979
dc.source.journalApplied Sciences
dc.source.issue8
dc.source.volume10
dc.identifier.urlhttps://doi.org/10.3390/app10082979
imec.availabilityPublished - imec


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