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Structural analysis of epitaxial Si layers grown on porous silicon

dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorStalmans, Lieven
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-06T11:27:00Z
dc.date.available2021-10-06T11:27:00Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3540
dc.sourceIIOimport
dc.titleStructural analysis of epitaxial Si layers grown on porous silicon
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage321
dc.source.endpage324
dc.source.conferenceMicroscopy of Semiconducting Materials
dc.source.conferencedate22/03/1999
dc.source.conferencelocationOxford UK
imec.availabilityPublished - open access
imec.internalnotesInstitute of Physics Conference Series; Vol. 164


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